shantou huashan electronic devices co.,ltd . n-channel enhancement mode field effect transistor applications ? servo motor control. ? power mosfet gate drivers. ? dc/dc converters ? other switching applications. features ? 70a, 60v(see note), r ds (on) < 13mv ? @v gs = 10 v ? fast switching ? 100% avalanche tested ? minimize input capaci tance and gate charge ? equivalent type:me70n06 maximum ratings ta=25 unless otherwise specified thermal characteristics symbol items to-220 unit rthj-case thermal resistance junction-case max 5.0 /w (t 10sec) 8 rthj-amb thermal resistance junction-ambient (steady state) 38 /w t stg storage temperature ------------------------------------------------------ - 55~150 t j operating junction temperature -------------------------------------------------- 150 v dss drain-source voltage ----------------------------------------------------------60v v gss gate-source voltage --------------------------------------------------------------------------- 20v i d drain current (continuous)(t c =25 ) ----------------------------------------------------------- 70a i dm pulsed drain current (note 1)----------- ------------------------------------------------------ 200a p d maximum power dissipation (t c =25 ) ------------------------------------------------------ 75w (t a =25 ) ----------------------- -------------------------------- 4w e as pulsed avalanche energy ------------------------------------------------------------------- 350mj HFP70N06 1- g 2-d 3-s to-220
shantou huashan electronic devices co.,ltd . electrical characteristics ta=25 unless otherwise specified symbol items min. typ. max. unit conditions off characteristics bv dss drain-source breakdown voltage 60 v i d =250 a ,v gs =0v i dss zero gate voltage drain current 1 a v ds =60v, v gs =0v i gss gate ? body leakage 100 na v gs = 20v , v ds =0v on characteristics v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d =250 a r ds(on) static drain-source on-resistance 13 m ? v gs =10v, i d =40a (note 2) dynamic characteri stics and switching characteristics ciss input capacitance 4560 pf coss output capacitance 430 pf crss reverse transfer capacitance 135 pf v ds = 25v, v gs = 0v, f = 1.0 mhz t d(on) turn - on delay time 37 ns tr rise time 20 ns t d(off) turn - off delay time 140 ns t f fall time 30 ns v ds = 30v, v gs = 10 v, r l =15 ,r g = 10 ? (note 2) qg total gate charge 85 nc qgs gate?source charge 28 nc qgd gate?drain charge 25 nc v ds =48v, id =60 a, v gs = 10v (note 2) rg gate resistance 2.4 ? f=1mhz drain-source diode charact eristics and maximun ratings i s continuous source?drain diode forward current 70 a i sm pulsed drain-source diode forward current 200 a v sd source?drain diode forward on?voltage 1.3 v i s =40a,v gs =0(note 2) notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. pulse test: pulse width 300 s, duty cycle 2% HFP70N06
shantou huashan electronic devices co.,ltd . typical characteristics HFP70N06
shantou huashan electronic devices co.,ltd . typical characteristics HFP70N06
shantou huashan electronic devices co.,ltd . typical characteristics HFP70N06
shantou huashan electronic devices co.,ltd . typical characteristics HFP70N06
|
